Comment on lasing emission from an In0.1Ga0.9N vertical cavity surface emitting laser
Identifieur interne : 013C99 ( Main/Repository ); précédent : 013C98; suivant : 013D00Comment on lasing emission from an In0.1Ga0.9N vertical cavity surface emitting laser
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Abstract
Someya recently reported [Jpn. J. Appl. Phys. 37 (1998) L1424] optically pumped laser operation from an InGaN-based vertical cavity surface emitting laser, which they characterize as the the first unambiguous observation of laser emission by a III-V nitride VCSEL. They claim that our previous report of lasing in a GaN-based vertical cavity laser is attributable to phenomena other than vertical lasing. We argue against the plausibility the authors unsubstantiated alternative explanation for our results, which forms the basis for their claim. © 1999 Publication Board, Japanese Journal of Applied Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Comment on lasing emission from an In<sub>0.1</sub>Ga<sub>0.9</sub>N vertical cavity surface emitting laser </title><author><name sortKey="Anderson, Neal G" uniqKey="Anderson N">Neal G. Anderson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst, Massachusetts 01003-5110</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Massachusetts</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst</wicri:cityArea></affiliation></author><author><name sortKey="Loeber, David A S" uniqKey="Loeber D">David A. S. Loeber</name><affiliation><inist:fA14 i1="02"><s1>Lasertron, 11 Oak Park, Bedford, Massachusetts, 01730</s1><sZ>2 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Redwing, Joan M" uniqKey="Redwing J">Joan M. Redwing</name><affiliation><inist:fA14 i1="03"><s1>Epitronics Corporation, 21002 North 19th Avenue, Suite 5, Phoenix, Arizona, 85027-2726</s1><sZ>3 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Tischler, Michael A" uniqKey="Tischler M">Michael A. Tischler</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Epitronics Corporation, 550 West Juanita Avenue, Mesa, Arizona 85210</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Epitronics Corporation, 550 West Juanita Avenue, Mesa</wicri:cityArea></affiliation></author><author><name sortKey="Flynn, Jeffrey S" uniqKey="Flynn J">Jeffrey S. Flynn</name><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>ATMI, 7 Commerce Drive, Danbury, Connecticut 06810-4196</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>ATMI, 7 Commerce Drive, Danbury</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0484339</idno><date when="1999-08-15">1999-08-15</date><idno type="stanalyst">PASCAL 99-0484339 AIP</idno><idno type="RBID">Pascal:99-0484339</idno><idno type="wicri:Area/Main/Corpus">014290</idno><idno type="wicri:Area/Main/Repository">013C99</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-4922</idno><title level="j" type="abbreviated">Jpn. J. Appl. Phys., Part I</title><title level="j" type="main">Japanese Journal of Applied Physics, Part I : Regular papers, short notes & review papers</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Laser cavity resonators</term><term>Nitrogen compounds</term><term>Optical pumping</term><term>Photoluminescence</term><term>Stimulated emission</term><term>Surface emitting lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255S</term><term>7845</term><term>Etude expérimentale</term><term>Laser émission surface</term><term>Résonateur cavité laser</term><term>Semiconducteur III-V</term><term>Indium composé</term><term>Gallium composé</term><term>Azote composé</term><term>Pompage optique</term><term>Emission stimulée</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Someya recently reported [Jpn. J. Appl. Phys. 37 (1998) L1424] optically pumped laser operation from an InGaN-based vertical cavity surface emitting laser, which they characterize as the the first unambiguous observation of laser emission by a III-V nitride VCSEL. They claim that our previous report of lasing in a GaN-based vertical cavity laser is attributable to phenomena other than vertical lasing. We argue against the plausibility the authors unsubstantiated alternative explanation for our results, which forms the basis for their claim. © 1999 Publication Board, Japanese Journal of Applied Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-4922</s0></fA01><fA02 i1="01"><s0>JAPNDE</s0></fA02><fA03 i2="1"><s0>Jpn. J. Appl. Phys., Part I</s0></fA03><fA05><s2>38</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Comment on lasing emission from an In<sub>0.1</sub>Ga<sub>0.9</sub>N vertical cavity surface emitting laser </s1></fA08><fA11 i1="01" i2="1"><s1>ANDERSON (Neal G.)</s1></fA11><fA11 i1="02" i2="1"><s1>LOEBER (David A. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>REDWING (Joan M.)</s1></fA11><fA11 i1="04" i2="1"><s1>TISCHLER (Michael A.)</s1></fA11><fA11 i1="05" i2="1"><s1>FLYNN (Jeffrey S.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst, Massachusetts 01003-5110</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Lasertron, 11 Oak Park, Bedford, Massachusetts, 01730</s1><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Epitronics Corporation, 21002 North 19th Avenue, Suite 5, Phoenix, Arizona, 85027-2726</s1><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Epitronics Corporation, 550 West Juanita Avenue, Mesa, Arizona 85210</s1><sZ>4 aut.</sZ></fA14><fA14 i1="05"><s1>ATMI, 7 Commerce Drive, Danbury, Connecticut 06810-4196</s1><sZ>5 aut.</sZ></fA14><fA20><s1>4794-4795</s1></fA20><fA21><s1>1999-08-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>9959</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0484339</s0></fA47><fA60><s1>P</s1><s3>CT</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Japanese Journal of Applied Physics, Part I : Regular papers, short notes & review papers</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Someya recently reported [Jpn. J. Appl. Phys. 37 (1998) L1424] optically pumped laser operation from an InGaN-based vertical cavity surface emitting laser, which they characterize as the the first unambiguous observation of laser emission by a III-V nitride VCSEL. They claim that our previous report of lasing in a GaN-based vertical cavity laser is attributable to phenomena other than vertical lasing. We argue against the plausibility the authors unsubstantiated alternative explanation for our results, which forms the basis for their claim. © 1999 Publication Board, Japanese Journal of Applied Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B40B55S</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H45</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4255S</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7845</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Laser émission surface</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Surface emitting lasers</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Résonateur cavité laser</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Laser cavity resonators</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Azote composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Nitrogen compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Pompage optique</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Optical pumping</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Emission stimulée</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Stimulated emission</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fN21><s1>305</s1></fN21><fN47 i1="01" i2="1"><s0>9942M000470</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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